2SC1359 0.03 a , 30 v npn plastic encapsulated transistor elektronische bauelemente 21-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? optimum for rf amplification of fm/am radios ? high transition frequency f t classification of h fe product-rank 2SC1359-b 2SC1359-c range 70~140 110~220 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 5 v collector current - continuous i c 30 ma collector power dissipation p c 400 mw thermal resistance from junction to ambient r ja 312 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 30 - - v i c =0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 20 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =0.1ma, i c =0 collector cut ? off current i cbo - - 0.1 a v cb =10v, i e =0 emitter cut ? off current i ebo - - 0.1 a v eb =5v, i c =0 dc current gain h fe 70 - 220 v ce =10v, i c =1ma collector to emitter saturation voltage v ce(sat) - - 0.2 v i c =15ma, i b =1.5ma base to emitter saturation voltage v be(sat) - - 1.2 v i c =15ma, i b =1.5ma transition frequency f t 150 - - mhz v ce =10v, i c =1ma, f=200mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
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